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Neurofuzzy Modeling of Chemical Vapor Deposition Processes. IEEE Trans. Semiconductor Manufactur. 2000, 13, pp 46–60. 20. Chang, P. ; Liao, T. W. Combining SOM and Fuzzy Rule Base for Flow Time Prediction in Semiconductor Manufacturing Factory. Appl. Soft Comput. 2006, 6, pp 198–206. 21. Chang, P. ; Hieh, J. ; Liao, T. W. Evolving Fuzzy Rules for Due-Date Assignment Problem in Semiconductor Manufacturing Factory. J. Intel. Manufactur. 2005, 16, pp 549– 557. 22. Fargher, H. ; Kilgore, M. ; Kline, P.

GARY S. htm }{{}} ● HOME ● ABOUT US ● CONTACT US ● HELP Home / Engineering / Electrical and Electronics Engineering Wiley Encyclopedia of Electrical and Electronics Engineering Chemical Vapor Deposition Standard Article Nitin Ingle1, Thomas F. Kuech1, Michael A. Tischler2 1University of Wisconsin—Madison, Madison, WI 2Epitronics, Inc. Copyright © 1999 by John Wiley & Sons, Inc. All rights reserved. W7002 Article Online Posting Date: December 27, 1999 Abstract | Full Text: HTML PDF (161K) ● ● ● ● Recommend to Your Librarian Save title to My Profile Email this page Print this page Browse this title ● Search this title Enter words or phrases Abstract The sections in this article are The CVD Process CVD Techniques Flow Regimes Mixed Convection Phenomena CVD Chemistry Summary About Wiley InterScience | About Wiley | Privacy | Terms & Conditions Copyright © 1999-2008John Wiley & Sons, Inc.

The higher-pressure systems typically allow for higher growth rates and a simplified gas-handling system. An array of energy sources have been used for CVD applications, including thermal CVD, plasma CVD, and photoenhanced CVD, referring to the specific method of energy input to the chamber and the wafer. Thermal CVD. In thermal CVD within a hot-walled reactor, heat is supplied by placing the reactor inside an oven or a furnace. In cold-wall configurations, the wafer and holder is heated by the resistive or inductive heating of a graphite (or other conducting) substrate.

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