By Kugler, Sándor; Shimakawa, Koichi

Explains the way to use machine modelling to appreciate amorphous semiconductors for researchers in good country physics and semiconductor engineering.

summary: Explains easy methods to use desktop modelling to appreciate amorphous semiconductors for researchers in strong nation physics and semiconductor engineering

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1989) Neutron‐diffraction study of the structure of evaporated pure amorphous silicon. Phys. Rev. B, 40, 8030–8032. , and Bellissent, R. (1993) Structure 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 of evaporated pure amorphous silicon: Neutron‐diffraction and reverse Monte Carlo investigation. Phys. Rev. B, 48, 7685–7688. Fortner, J. S. (1989) Radial distribution functions of amorphous silicon. Phys. Rev. B, 39, 5527–5530. , Wang, L. C. (1999) High resolution radial distribution function of pure amorphous silicon.

A large number of bond angles can be found around 90° too. Source: K. Kohary 2004 [51]. Reproduced with permission of Taylor & Francis. for Si. 3 nm. The motion of a 1 eV hydrogen atom in the solid state can therefore only described by including quantum effects in the dynamics. Another difficulty is the interaction of H with bulk silicon. A relatively large (242 atoms) a‐Si:H model was constructed by Tuttle and Adams [64] using a Harris functional MD method. The hydrogen concentration was 11%. The model obtained contains microclusters of 2–4 H in addition to H passivating the surface of large cavities.

J. Non‐Cryst. Solids, 48, 265–289. , and Pusztai, L. (2003) Structural models of amorphous selenium. Phys. Rev. B, 67, 172201‐1–4. P. (1990) Atomic‐resolution electron holography in solids with localized sources. Phys. Rev. , 65, 1012–1015. Tegze, M. and Faigel, G. (1996) X‐ray holography with atomic resolution. Nature, 380, 49–51. , and Shibata, K. (2008) Neutron holography measurement using multi array detector. Japan. J. Appl. , 47, 2291–2293. , and Faragó, B. (2002) Holographic imaging of atoms using thermal neutrons.

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