By R.K. Willardson and Albert C. Beer (Eds.)

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33. Schematic diagram of a vapor-transport system for epitaxial growth of GAS. The system, with different operating temperatures. is applicable for either halide or oxide transport. 9 ’ 8" R. R. Moest, J . Electrochem. Soc. 113, 141 (1966). K. L. Lawley, J . Electrochem. Soc. 113,240 (1966). J. J. Tietjen and J. A. Amick, J . Electrochem. Soc. 113, 724 (1966). D. Effer, J . Electrochem. Soc. 112, 1020 (1965). *' 82 58 JOHN A. 34. Schematic diagram of a vapor-synthesis system for epitaxial growth of GaAs system by bubbling hydrogen through AsCl,, which is a high-vaporpressure liquid at room temperature.

35. Schematicdiagram ofa vapor synthesis-transport system for epitaxial growth ofGaAs. The material is synthesized in the source boat and transported to the substrate. 83 J. Whitaker and D. E. Bolger, Solid Srure Commun. 4, 181 (1966) 1. The ~~ volatile source of gallium is offered by organometallic compounds, such as (CH,),Ga and (C,H,),Ga. The arsenic source can be either sublimed from solid arsenic or be ASH,. The two gases are reacted at the hot substrate to form epitaxial GaAs. The principal advantage of this technique is that only the substrate need be hot, greatly reducing the possibility of wall contamination : The heating of the substrate can be accomplished by standard rf induction techniques developed for germanium and silicon epitaxy.

The original source is gallium metal. 33. Schematic diagram of a vapor-transport system for epitaxial growth of GAS. The system, with different operating temperatures. is applicable for either halide or oxide transport. 9 ’ 8" R. R. Moest, J . Electrochem. Soc. 113, 141 (1966). K. L. Lawley, J . Electrochem. Soc. 113,240 (1966). J. J. Tietjen and J. A. Amick, J . Electrochem. Soc. 113, 724 (1966). D. Effer, J . Electrochem. Soc. 112, 1020 (1965). *' 82 58 JOHN A. 34. Schematic diagram of a vapor-synthesis system for epitaxial growth of GaAs system by bubbling hydrogen through AsCl,, which is a high-vaporpressure liquid at room temperature.

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